HM11B1 HD Sensor for Always On Vision Ultra Slim Camera Applications
Stacked BSI 1280 x 800 60FPS 1/11″ 40mW 720p60 <1mW AONV & Monitor Mode
The HM11B1 is an ultra-low power 1/11” HDCMOS image sensor designed with Himax Imaging Ultrasense-AoSTM stacked technology that delivers exceptional image quality performance and integration. The sensor package measures only 2.3mm x 1.5mm for module y-dimension as small as 2.2mm to support thin bezel HD notebook and small form factor IoT devices.
The HM11B1 consumes approximately 40mW at 60 frames per second operation and features sub-milliwatt readout modes and embedded Wake-on-Motion monitoring over the entire field of view. The HM11B1 ultra low power readout and sensing modes can be triggered by the host or operated autonomously to enable Always-On contextual awareness for next generation computer vision features, such as wake on human-detected approach.
To further reduce the camera power consumption and system latency, the HM11B1 offers fast boot up time, <50ms time to well-exposed frame output (typical case and includes 33ms exposure time assumption), context switching and instant frame update.
The HM11B1 is offered in Bayer RGB, 4×4 RGB-IR and White-IR filter array. The RGB-IR sensor can be used to support active illumination in dark conditions or support system authentication reliant on IR information. The sensor features separate analog gain amplifier for visible and IR channel to compensate for response differences in the scene illumination.
Additionally, the sensor offers flexible readout, including multiple sensor binning modes to reduce data bandwidth while improving signal to noise ratio, and option for visible only or IR only readout (RGB-IR sensor only). The HM11B1 supports MIPI-CSI2 interface and Serial Digital Interface (SDI) that can interface to a secondary AI CV processor. The data interfaces can run independently or simultaneously (dual mode). In dual mode, the sensor allows lower frame rate at SDI output while operating at 30 or 60 frames per second over the MIPI interface.
The HM11B1 supports 3 power supply configurations for the lowest power consumption, and support 2 supply or 1 supply configuration to simplify system power design. The sensor requires minimal passive components to enable a highly compact camera module design for next generation computing and smart camera devices.
Features
- Ultra low power, 1/11” HD sensor with 0.9mW Wake on Motion mode and <50mW HD at 60FPS
- Chip package of 2.3mm x 1.5mm to support 2.2mm module length for thin bezel devices
- Embedded motion detection with digital interrupt output to wake external host processor
- <50ms from trigger to well exposed frame using on-chip pre-metering function
- Embedded Auto Exposure and Gain control loop
- On-chip light level estimator
- Pre-exposure provides well exposed first frame and after extended sleep (blanking) period
- Automatic wake and sleep operation
- Programmable event interrupt to wake host processor and enable efficient “Always On Vision” application
- Quick mode switch and command update every frame
- Highly flexible binning and subsampling mode with readout options for quad, color channel, visible channel and IR channel
- Embedded line provides metadata frame, AE statistics, Motion detection statistics and other interrupt event information (Available in MIPI mode only)
- On-chip high precision oscillator
- I2C 2-wrie serial interface supporting burst operation for fast register access
- Integrated Low Dropout (LDO) regulator to support dual 2.8 / 1.8V or single 2.8V operation
- High CRA for low profile module design
- 1-lane MIPI CSI2 and CMOS level serial video interface with support for single interface or concurrent dual interface operation
- Supports programmable Spread Spectrum Clock Generation (SSCG) for MIPI DPHY
Sensor Parameters
Active Pixel Array | 1280 x 800 |
Pixel Size / Technology | 1.12 µm x 1.12 µm / BSI |
Diagonal (Optical Format) | 1.715 mm (1/11″) |
Color Filter Array | Bayer, RGBIR (4×4), W-IR |
Frame Ratemax | 60FPS 800p |
Readout Modes | Full (800p), Bin or Sub 2 / 4 / 8 |
S/N Ratiomax | 34dB |
Sensitivity @ 530nm Bayer Sensitivity @ 530nm RGBIR Sensitivity @ 530nm W-IR | 656 mV / Lux-sec 598 mV / Lux-sec TBD mV / [µW-sec/cm^2] |
Sensitivity @ 850nm Bayer Sensitivity @ 850nm RGBIR Sensitivity @ 850nm W-IR | 1938 mV / [µW-sec/cm^2] 1685 mV / [µW-sec/cm^2] TBD mV / [µW-sec/cm^2] |
Sensitivity @ 940nm Bayer Sensitivity @ 940nm RGBIR Sensitivity @ 940nm W-IR | 932 mV / [µW-sec/cm^2] 1212 mV / [µW-sec/cm^2] TBD mV / [µW-sec/cm^2] |
CRA (maximum) | 33.3º |
Sensor Specifications
Supply Voltage Analog Supply Voltage Digital Supply Voltage I/O | 2.8 V 1.1V (1.8V LDO option) 1.8V / 2.8V |
Reference Clock (EXTCLK) | 9 – 27 MHz (SCL=400 kHz) 16 – 27 MHz (SCL=1 MHz) |
Internal Oscillator | 48 MHz |
Serial Interface | I²C (1MHz max., single / burst) |
Pixel Data Interface | MIPI CSI2, SDI |
Pixel Data Format | 8-bit, 10-bit (MIPI-CSI2) 8-bit (SDI) |
Power Consumption Monitor Power Consumption RQQHD 3FPSGBIR Power Consumption QHD 3FPS Power Consumption HD 30FPS Power Consumption HD 60FPS | 912 µW 756 µW 1.26 mW 26.66 mW 40.03 mW |
Package | RW |